| PART |
Description |
Maker |
| J110-TR1-E3 |
TRANS JFET N-CH 25V 10MA 3TO-92 T/R
|
Vishay
|
| MJE2100 |
Trans GP BJT PNP 25V 5A 3-Pin TO-126
|
New Jersey Semiconductor
|
| 2N334 2N335 2N334A 2N335/1299 |
Trans GP BJT NPN 3-Pin TO-5
Trans GP BJT PNP 45V 0.03A 6-Pin LCC-2
Trans GP BJT PNP 40V 0.2A 6-Pin LCC-2
|
New Jersey Semiconductor
|
| 2N549 2N3262 |
Trans GP BJT NPN 80V 7A 3-Pin(2 Tab) TO-66 Sleeve
Trans GP BJT NPN 90V 25A 3-Pin TO-63
|
New Jersey Semiconductor
|
| BDX47 BDX46-16 |
Trans Darlington PNP 80V 1A 3-Pin TO-126
Trans Darlington NPN 45V 1A 3-Pin TO-126
|
New Jersey Semiconductor
|
| 2SK30A-R 2SK30A-Y 2N4303 2N3686A 2N5717 2N5718 2SK |
TRANSISTOR | JFET | N-CHANNEL | 6.5MA I(DSS) | TO-92
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
TRANSISTOR | JFET | N-CHANNEL | 1.2MA I(DSS) | TO-72
TRANSISTOR | JFET | N-CHANNEL | 800UA I(DSS) | TO-92
TRANSISTOR | JFET | N-CHANNEL | 30V V(BR)DSS | 15MA I(DSS) | TO-106 晶体管|场效应| N沟道| 30V的五（巴西）直| 15mA的我（直）|106
|
EPCOS AG
|
| SI4965DY-T1-GE3 |
Trans MOSFET P-CH 8V 8A 8-Pin SOIC N T/R
|
Vishay Siliconix
|
| IRLD024 |
Trans MOSFET N-CH 60V 2.5A 4-Pin HVMDIP
|
Vishay Siliconix
|
| 2N1484 |
Trans GP BJT NPN 55V 3A 3-Pin TO-8
|
New Jersey Semiconductor
|
| 2N3728 |
Trans GP BJT PNP 60V 3A 3-Pin TO-5
|
New Jersey Semiconductors
|
| SI4826DY-T1 |
Trans MOSFET N-CH 30V 5.3A/7A 8-Pin SOIC N T/R
|
Vishay Siliconix
|
